Objectives:
To introduce the students about the various steps in the IC fabrication process starting from raw silicon. With this paper, students should be aware of the physical principles of IC technology process.
Module I (13 hours)
Wafer processing - diffusion - Fick’s law - analytic solutions for predeposition and drive-in diffusion - oxidation - deal-grove model - ion implantation - vertical and lateral projected ranges - channeling - stopping power - optical lithography - optical exposures - modulation transfer function - proximity and projection printing - photoresists - types - contrast curves - etching - wet, plasma and ion etching - epitaxial growth - MOCVD and molecular beam epitaxy
Module II (13 hours)
Device isolation - contacts and metallization - junction and oxide isolation - LOCOS - SILO - SWAMI process - trench isolation - silicon on insulator isolation - schottky contacts - implanted ohmic contacts - alloyed contacts - refractory metal contact technology - multi level metallization
Module III (13 hours)
CMOS and bipolar technologies - early bipolar process - advanced bipolar processes - CMOS process - p well process - twin tub process - hot carrier effects in BJT and CMOS - BiCMOS fabrication process sequence
Module IV (13 hours)
VLSI design fundamentals - layout and design rules for well, pads, metal layers, poly 1, poly 2 - layout using cell hierarchy - layout of MOSFET - layout of the inverter - NOR and NAND gates - layout of junction isolated BJT
Text books
1.Campbell S.A., The Science & Engineering of Microelectronic Fabrication, Oxford University Press
2.Nagchowdhari D., Principles of Microelectronics Technology, Wheeler Publishing
3.Pucknell D.A. & Kamran Eshragian, ‘Basic VLSI Design’, PHI
Reference books
2.Chang C.Y. & Sze S.M., ‘VLSI Technology’, MGH
3.Ruska W.S., ‘Microelectronic Processing’, MGH
4.Backmann K.J., ‘The Material Science of Microelectronics’, VCH Publishers
5.Jacob Baker R., Li H.W. & Boyce D.E., ‘CMOS - Circuit Design, Layout & Simulation’, PHI